| PART |
Description |
Maker |
| GS816136CD-300IT |
1M x 18 and 512K x 36 18Mb Sync Burst SRAMs 512K X 36 CACHE SRAM, 5 ns, PBGA165
|
GSI Technology, Inc.
|
| GS8161E18BGD-250IV GS8161E18BT-250IV GS8161E18BT-2 |
1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs
|
GSI[GSI Technology]
|
| GS816032T-166I GS816018T-133 GS816018T-133I GS8160 |
1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs
|
GSI Technology
|
| GS8160EV18AT-150I GS8160EV18AT-250I GS8160EV18AT-3 |
1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs
|
GSI[GSI Technology]
|
| GS8160F18BT-5.5IV GS8160F18BT-5.5V GS8160F18BT-6.5 |
1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs
|
GSI[GSI Technology]
|
| GS8170DW36C-250 GS8170DW36C-250I GS8170DW36C-300 G |
250MHz 512K x 36 18MB double late write sigmaRAM SRAM
300MHz 512K x 36 18MB double late write sigmaRAM SRAM
333MHz 512K x 36 18MB double late write sigmaRAM SRAM
333MHz 256K x 72 18MB double late write sigmaRAM SRAM
|
GSI Technology
|
| IS61LPD102418A-200TQI IS61LPD102418A-200B3 IS61LPD |
512K x 36, 1024K x 18 18Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAM 512K X 36 CACHE SRAM, 3.1 ns, PQFP100
512K x 36, 1024K x 18 18Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAM 512K X 36 CACHE SRAM, 2.6 ns, PQFP100
|
Integrated Silicon Solution, Inc.
INTEGRATED SILICON SOLUTION INC
|
| GS816272C-166I GS816272C-133I GS816218D-150 GS8162 |
1M x 18, 512K x 36, 256K x 72 18Mb Sync Burst SRAMs 256K X 72 CACHE SRAM, 7 ns, PBGA209
1M x 18, 512K x 36, 256K x 72 18Mb Sync Burst SRAMs 256K X 72 CACHE SRAM, 8.5 ns, PBGA209
1M x 18, 512K x 36, 256K x 72 18Mb Sync Burst SRAMs 1M X 18 CACHE SRAM, 7.5 ns, PBGA165
1M x 18, 512K x 36, 256K x 72 18Mb Sync Burst SRAMs 1M X 18 CACHE SRAM, 6 ns, PBGA165
1M x 18, 512K x 36, 256K x 72 18Mb Sync Burst SRAMs 1M X 18 CACHE SRAM, 6.5 ns, PBGA165
1M x 18, 512K x 36, 256K x 72 18Mb Sync Burst SRAMs 1M X 18 CACHE SRAM, 5.5 ns, PBGA165
1M x 18, 512K x 36, 256K x 72 18Mb Sync Burst SRAMs 512K X 36 CACHE SRAM, 8.5 ns, PBGA165
|
GSI Technology, Inc.
|
| GS8161V18CD-300I GS8161V36CGD-250 GS8161V18CGD-333 |
1M x 18 and 512K x 36 18Mb Sync Burst SRAMs 1M X 18 CACHE SRAM, 5 ns, PBGA165
1M x 18 and 512K x 36 18Mb Sync Burst SRAMs 512K X 36 CACHE SRAM, 5.5 ns, PBGA165
1M x 18 and 512K x 36 18Mb Sync Burst SRAMs 1M X 18 CACHE SRAM, 4.5 ns, PBGA165
|
GSI Technology, Inc.
|
| GS8170DW36AC GS8170DW36AC-250 GS8170DW36AC-350 GS8 |
18Mb B>1x1Dp CMOS I/O Double Late Write SigmaRAM
18Mb x1Dp CMOS I/O Double Late Write SigmaRAM 512K X 36 STANDARD SRAM, 2.1 ns, PBGA209
18Mb x1Dp CMOS I/O Double Late Write SigmaRAM 512K X 36 STANDARD SRAM, 1.8 ns, PBGA209
18Mb x1Dp CMOS I/O Double Late Write SigmaRAM 35.7x1Dp的CMOS的I / O双晚SigmaRAM
18Mb x1Dp CMOS I/O Double Late Write SigmaRAM 256K X 72 STANDARD SRAM, 1.8 ns, PBGA209
|
GSI Technology, Inc.
|
|
